发明申请
- 专利标题： LOW K DIELECTRIC SURFACE DAMAGE CONTROL
- 专利标题（中）： 低K电介质表面损伤控制
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申请号： US11457888申请日： 2006-07-17
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公开(公告)号： US20070026668A1公开(公告)日： 2007-02-01
- 发明人: Hun-Jan Tao , Ryan Chen , Mong-Song Liang
- 申请人： Hun-Jan Tao , Ryan Chen , Mong-Song Liang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/465
- IPC分类号： H01L21/465
摘要：
A method of removing a silicon nitride or a nitride-based bottom etch stop layer in a copper damascene structure by etching the bottom etch stop layer is disclosed, with the method using a high density, high radical concentration plasma containing fluorine and oxygen to minimize back sputtering of copper underlying the bottom etch stop layer and surface roughening of the low-k interlayer dielectric caused by the plasma.
公开/授权文献
- US07709392B2 Low K dielectric surface damage control 公开/授权日：2010-05-04
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