发明申请
US20070029627A1 Reducing the dielectric constant of a portion of a gate dielectric
审中-公开
降低栅极电介质的一部分的介电常数
- 专利标题： Reducing the dielectric constant of a portion of a gate dielectric
- 专利标题（中）： 降低栅极电介质的一部分的介电常数
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申请号： US11545313申请日： 2006-10-10
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公开(公告)号： US20070029627A1公开(公告)日： 2007-02-08
- 发明人: Suman Datta , Jack Kavalieros , Mark Doczy , Matthew Metz , Justin Brask , Robert Chau
- 申请人： Suman Datta , Jack Kavalieros , Mark Doczy , Matthew Metz , Justin Brask , Robert Chau
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have a vertical portion that may be exposed to a silicon ion implantation. As a result of the implantation, the dielectric constant of a vertical portion may be reduced, reducing fringe capacitance.
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