An integrated circuit (IC) includes a semiconductor material, electronic circuitry formed on the semiconductor material, a contact layer formed on the electronic circuitry, a final passivation layer formed on the contact layer and an under-bump metallurgy (UBM) formed on at least a portion of the final passivation layer. The contact layer includes a plurality of contacts pads for providing external access to the electronic circuitry. The final passivation layer includes a plurality of windows that extend through the final passivation layer to the contact pads. The UBM includes an aluminum layer having a thickness of about 800 angstroms to about 1200 angstroms, a nickel/vanadium (Ni/V) layer having a thickness of about 800 angstroms to about 1200 angstroms and a copper (Cu) layer having a thickness of about 800 angstroms to about 1200 angstroms.