发明申请
- 专利标题： Electron emission device
- 专利标题（中）： 电子发射装置
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申请号： US11495731申请日： 2006-07-31
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公开(公告)号： US20070029935A1公开(公告)日： 2007-02-08
- 发明人: Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
- 申请人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiroaki Yoshida , Mariko Suzuki
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2005-225898 20050803
- 主分类号： H01J17/02
- IPC分类号： H01J17/02
摘要：
The electron emission device includes a first electrode; a semiconductor barrier that has a first face disposed to face the first electrode and a second face which is opposite face of the first face, and is formed with a wide bandgap semiconductor; an insulating material that forms a space sealed between the first electrode and the semiconductor barrier; an inert gas that is encapsulated in the space; a second electrode that is disposed to face a second face of the semiconductor barrier interposing vacuum therebetween; a first voltage applying unit that applies a voltage between the first electrode and the semiconductor barrier; and a second voltage applying unit that applies a voltage between the semiconductor barrier and the second electrode.