摘要:
a manufacturing method of a semiconductor substrate includes the following steps: forming a first wiring layer on a substrate; forming an interlayer insulating film having a via hole on the wiring layer; forming carbon nanotubes in the via hole; performing a fluorination treatment entirely to the substrate; forming an embedded film in the via hole having the carbon nanotubes therein; and polishing the substrate to entirely flatten the substrate.
摘要:
An interconnection includes a bundle of conductive members, each of the conductive members being made of carbon nanotube having an end connected to a first conductive film, and another end connected to a second conductive film separated from the first conductive film; and carbon particles each having a diamond crystal structure, dispersed between the conductive members.
摘要:
A process is provided by which a polyrotaxane including cyclic molecules having a relatively long graft chain is easily obtained. Also provided is a polyrotaxane which includes cyclic molecules having a radical polymerization initiation site and is for use as a raw material in the process. The polyrotaxane comprises: a pseudo-polyrotaxane comprising cyclic molecules clathrated with a linear molecule, the cavities of the cyclic molecules having been pierced by the linear molecule; and blocking groups disposed respectively at both ends of the pseudo-polyrotaxane so as not to release the cyclic molecules. The cyclic molecules in the polyrotaxane have a radical polymerization initiation site.
摘要:
Provided is an inkjet recording medium in which hydrated alumina and a sulfinic acid compound or thiosulfonic acid compound coexist in a pigment in an ink receiving layer, and which can prevent white-background yellowing during storage in a resin file holder or the like and ensure printing quality at the same time. The ink receiving layer of the inkjet recording medium contains the sulfinic acid compound or thiosulfonic acid compound, which functions to prevent yellowing, in a salt form or in a free form so as to be diffusible.
摘要:
A heat sink includes a base portion formed of insulating diamond, and a plurality of pressure contacting members formed of the insulating diamond and arranged on the base portion
摘要:
An interconnection includes a bundle of conductive members, each of the conductive members being made of carbon nanotube having an end connected to a first conductive film, and another end connected to a second conductive film separated from the first conductive film; and carbon particles each having a diamond crystal structure, dispersed between the conductive members.
摘要:
A cold cathode for a discharge lamp includes a metal plate that has bending portions; a diamond film that is formed on a face of the metal plate, except for the bending portions; and a metal member that is mounted on the metal plate.
摘要:
A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. Acceptor impurity atoms and donor impurity atoms being doped in the wide bandgap semiconductor, the activation energy of the donor impurity atoms being larger than the activation energy of the acceptor impurity atoms.
摘要:
A discharge lamp, in which diamond high in secondary electron emission efficiency and low in sputtering ratio is used as a cold cathode, includes an outer envelope filled with a discharge gas, a fluorescent film provided on an inner surface of the outer envelope, and a pair of electrodes which cause discharge to occur within the outer envelope. A diamond member is provided on a surface of each electrode, and oxygen is contained in the discharge gas at a ratio not less than 0.002% and not more than 12.5%.
摘要:
A discharge lamp encompassing a sealed-off tube filled with a discharge gas and a discharge electrode provided in the sealed-off tube. The discharge electrode embraces a supporting base and an electron-emitting layer formed of a wide bandgap semiconductor and provided on the supporting base, implemented by a plurality of protrusions, at least part of surfaces of the protrusions are unseen from a perpendicular direction to thereof above a top surface of the electron-emitting layer, dangling bonds of the wide bandgap semiconductor at the surfaces are terminated with hydrogen atoms.