发明申请
- 专利标题： Process for manufacturing a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US11580938申请日： 2006-10-16
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公开(公告)号： US20070032049A1公开(公告)日： 2007-02-08
- 发明人: Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
- 申请人： Shunpei Yamazaki , Hisashi Ohtani , Toru Mitsuki , Hideto Ohnuma , Tamae Takano , Kenji Kasahara , Koji Dairiki
- 申请人地址： JP Atsugi-shi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2001-075376 20010316
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.
公开/授权文献
- US07485553B2 Process for manufacturing a semiconductor device 公开/授权日：2009-02-03
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