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发明申请
US20070032053A1 Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same 有权
制造碳化硅半导体衬底的方法，由此获得的碳化硅半导体衬底和使用其的碳化硅半导体

Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same
摘要：
The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped with germanium and a semiconductor device layer are sequentially laminated on the buffer layer, a silicon carbide semiconductor substrate obtained by the method and a silicon carbide semiconductor in which electrodes are disposed on the silicon carbide semiconductor substrate.
摘要（中）：

本发明提供了一种制造碳化硅半导体衬底的方法，其中掺杂有锗和半导体器件层的碳化硅缓冲层依次层叠在缓冲层上，通过该方法获得的碳化硅半导体衬底和碳化硅半导体 其中电极设置在碳化硅半导体衬底上。

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