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发明申请
US20070034159A1 Semiconductor manufacturing device and its heating unit 审中-公开
半导体制造装置及其加热装置

Semiconductor manufacturing device and its heating unit
摘要：
A semiconductor manufacturing device according to the present invention includes a processing chamber (11), a transferring passage (12) through which a wafer is put in and taken out of the processing chamber (11), an exhaust passage (13) and exhaust lines (40 and 40′) through which a processing gas inside the processing chamber (11) is exhausted, and so on, and in order to heat the inner wall faces (11a, 11b, 12a, 13a, 410a, and 420a) of the processing chamber (11), the transferring passage (12), the exhaust passage (13) and the exhaust pipes (410 and 420), further includes sheet-like heating units (50, 60, 70, 80, 170, and 270) that sandwich and cover a thin plate-shaped resistive heating element by a pair of metal plates and cover the inner wall faces from the inner side. Thereby, the heating efficiency on the wall faces to be exposed to the processing gas increases, adhesion of by-products can be prevented, and deterioration of the resistive heating element can also be prevented.
摘要（中）：

根据本发明的半导体制造装置包括处理室（11），将晶片放入和移出处理室（11）的输送通道（12），排气通道（13）和排气管 （40）和（40'），处理室（11）内的处理气体通过其排出，等等，为了加热内壁面（11a，11b，12a，13a， 和处理室（11），转移通道（12），排气通道（13）和排气管（410和420）之间的部分，还包括片状加热单元（50,60,70,80） ，170和270），其通过一对金属板夹住并覆盖薄板状电阻加热元件，并从内侧覆盖内壁面。 因此，暴露于处理气体的壁面上的加热效率提高，可以防止副产物的粘附，并且还可以防止电阻加热元件的劣化。

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