发明申请
- 专利标题： Ferroelectric film, semiconductor device, ferroelectric film manufacturing method, and ferroelectric film manufacturing apparatus
- 专利标题（中）： 铁电体膜，半导体装置，铁电体膜制造方法以及铁电体膜制造装置
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申请号： US10544559申请日： 2004-02-03
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公开(公告)号： US20070034918A1公开(公告)日： 2007-02-15
- 发明人: Tadahiro Ohmi , Ichiro Takahashi , Atsuhiko Yamada , Hiroyuki Sakurai
- 申请人： Tadahiro Ohmi , Ichiro Takahashi , Atsuhiko Yamada , Hiroyuki Sakurai
- 申请人地址： JP TOKYO 107-8481
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP TOKYO 107-8481
- 优先权： JP2003-028256 20030205
- 国际申请： PCT/JP04/01061 WO 20040203
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
An object of the present invention is, while decreasing a relative dielectric constant of a ferroelectric film of Sr2(Ta1-xNbx)O7 (0≦x≦1), to increase an coercive electric field thereof. The present invention is a ferroelectric film manufacturing method, which includes a film forming step of, in a processing chamber at least an inner surface around a target of which is formed of the same component material as the target, forming a ferroelectric film by colliding ions in plasma with the target and depositing target atoms produced by the collision on a base, and a heating step of heating and oxidizing the ferroelectric film.
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