发明申请
- 专利标题: IN-SITU ATOMIC LAYER DEPOSITION
- 专利标题(中): 现场原子层沉积
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申请号: US11462234申请日: 2006-08-03
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公开(公告)号: US20070037412A1公开(公告)日: 2007-02-15
- 发明人: Anthony Dip , Sadao Sasaki , Michael Toeller , Kimberly Reid
- 申请人: Anthony Dip , Sadao Sasaki , Michael Toeller , Kimberly Reid
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 主分类号: H01L21/31
- IPC分类号: H01L21/31
摘要:
An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).