- 专利标题： Semiconductor device and capacitance regulation circuit
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申请号： US11589172申请日： 2006-10-30
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公开(公告)号： US20070040185A1公开(公告)日： 2007-02-22
- 发明人: Koichi Sugiyama , Tomoki Inoue
- 申请人： Koichi Sugiyama , Tomoki Inoue
- 申请人地址： JP Minato-Ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-Ku
- 优先权： JP2002-161469 20020603
- 主分类号： H01L29/74
- IPC分类号： H01L29/74
摘要：
According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control electrode, a current flowing between the first and second main electrodes being controlled by a control signal which is input between the control electrode and the second main electrode; and a capacitor formed by providing an insulating layer between the second main electrode and the control electrode of the semiconductor element.
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