发明申请
US20070040227A1 Reducing gate dielectric material to form a metal gate electrode extension
审中-公开
减少栅介质材料形成金属栅电极延伸
- 专利标题： Reducing gate dielectric material to form a metal gate electrode extension
- 专利标题（中）： 减少栅介质材料形成金属栅电极延伸
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申请号： US11586791申请日： 2006-10-26
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公开(公告)号： US20070040227A1公开(公告)日： 2007-02-22
- 发明人: Suman Datta , Justin Brask , Jack Kavalieros , Mark Doczy , Matthew Metz , Robert Chau
- 申请人： Suman Datta , Justin Brask , Jack Kavalieros , Mark Doczy , Matthew Metz , Robert Chau
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have vertical portions that may be exposed to a reduction reaction. As a result of the reduction reaction, the vertical portions may be converted to metal, which adds to the existing gate electrode. In some cases, removing the vertical dielectric portions reduces fringe capacitance and may also advantageously slightly increased underdiffusion without adding heat, in some embodiments.
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