发明申请
- 专利标题： Formation of uniform silicate gate dielectrics
- 专利标题（中）： 均匀硅酸盐栅极电介质的形成
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申请号： US11205477申请日： 2005-08-17
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公开(公告)号： US20070042555A1公开(公告)日： 2007-02-22
- 发明人: Hiroaki Niimi , Luigi Colombo , James Chambers
- 申请人： Hiroaki Niimi , Luigi Colombo , James Chambers
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Inc.
- 当前专利权人： Texas Instruments Inc.
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/3205 ; H01L21/8234
摘要：
The present invention provides method of forming a gate dielectric that includes forming a metal source layer (210) comprising a metal and at least one nonmetallic element over a substrate (110). The metal source layer (210) is formed having a composition rich in the metal. A dielectric layer (310) comprising the metal is formed over the metal source layer (210).
公开/授权文献
- US07799668B2 Formation of uniform silicate gate dielectrics 公开/授权日：2010-09-21
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