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    Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication
    3.
    发明申请
    Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication 有权
    用于减轻浅沟槽隔离制造的蚀刻停止限幅的方法和系统

    公开(公告)号：US20070134886A1

    公开(公告)日：2007-06-14

    申请号：US11678107

    申请日：2007-02-23

    Applicant: Manuel Quevedo-Lopez ,  James Chambers ,  Leif Olsen

    Inventor： Manuel Quevedo-Lopez ,  James Chambers ,  Leif Olsen

    IPC: H01L21/76

    CPC classification number: H01L29/7842 ,  H01L21/76224 ,  H01L21/823807 ,  H01L21/823878

    Abstract: The present invention facilitates semiconductor fabrication by maintaining shape and density of an etch stop layer (206) during trench fill operations. The shape and density of the etch stop layer (206) is maintained by forming a protective alloy liner layer (310) on the etch stop layer (206) prior to trench fill operations. The protective alloy liner (310) is comprised of an alloy that is resistant to materials employed in the trench fill operations. As a result, clipping and/or damage to the etch stop layer (206) is mitigated thereby facilitating a subsequent planarization process that employs the etch stop layer (206). Additionally, selection of thickness and composition (1706) of the formed protective alloy (310) yields a stress amount and type (1704) that is applied to channel regions of unformed transistor devices, ultimately providing for an improvement in channel mobility.

    Abstract translation: 本发明通过在沟槽填充操作期间保持蚀刻停止层（206）的形状和密度来促进半导体制造。 通过在沟槽填充操作之前在蚀刻停止层（206）上形成保护合金衬垫层（310）来保持蚀刻停止层（206）的形状和密度。 保护合金衬套（310）由对沟槽填充操作中使用的材料具有耐受性的合金构成。 结果，减轻了对蚀刻停止层（206）的削波和/或损伤，从而有利于采用蚀刻停止层（206）的随后的平坦化工艺。 此外，形成的保护合金（310）的厚度和组成（1706）的选择产生施加到未成形晶体管器件的沟道区域的应力量和类型（1704），最终提供了沟道迁移率的改善。

    Work function separation for fully silicided gates
    5.
    发明申请
    Work function separation for fully silicided gates 审中-公开
    完全硅化栅的工作功能分离

    公开(公告)号：US20070037333A1

    公开(公告)日：2007-02-15

    申请号：US11203716

    申请日：2005-08-15

    Applicant: Luigi Colombo ,  James Chambers ,  Mark Visokay

    Inventor： Luigi Colombo ,  James Chambers ,  Mark Visokay

    IPC: H01L21/8234

    CPC classification number: H01L21/823835 ,  H01L21/823842

    Abstract: Forming metal gate transistors that have different work functions is disclosed. In one example, a first metal is added to a first region of polysilicon overlying a dielectric that is on a substrate, and a second metal is added to a second region of the polysilicon. A third metal is formed over the first and second regions and a silicidation process if performed to form a first alloy in the first region and a second alloy in the second region. First and second segregated regions are also established adjacent to the dielectric in the first and second regions, respectively. The first and second metals serve to shift or adjust respective values of first and second work functions in the first and second regions.

    Abstract translation: 公开了具有不同功函数的金属栅极晶体管。 在一个示例中，将第一金属添加到覆盖在衬底上的电介质上的多晶硅的第一区域中，并且将第二金属添加到多晶硅的第二区域。 在第一和第二区域上形成第三金属，如果在第一区域中形成第一合金并且在第二区域中形成第二合金，则形成硅化工艺。 第一和第二分离区域也分别在第一和第二区域中的电介质附近建立。 第一和第二金属用于移动或调整第一和第二区域中的第一和第二功函数的相应值。

    Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of silicon
    6.
    发明申请
    Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of silicon 有权
    半导体CMOS器件和方法与NMOS高k电介质之间形成核心PMOS氮氧化硅介质形成之前，采用直接氮化硅

    公开(公告)号：US20060246647A1

    公开(公告)日：2006-11-02

    申请号：US11118842

    申请日：2005-04-29

    Applicant: Mark Visokay ,  Luigi Colombo ,  James Chambers

    Inventor： Mark Visokay ,  Luigi Colombo ,  James Chambers

    IPC: H01L21/8238 ,  H01L21/8242

    CPC classification number: H01L27/105 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/11 ,  H01L27/1116

    Abstract: The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively form high-k dielectric layers within NMOS regions. An oxide layer is formed in core and I/O regions of a semiconductor device (506). The oxide layer is removed (508) from the core region of the device. A high-k dielectric layer is formed (510) over the core and I/O regions. Then, the high-k dielectric layer is removed (512) from PMOS regions of the core and I/O regions. A silicon nitride layer is grown (516) within PMOS regions of the core and I/O regions by a low temperature thermal process. Subsequently, an oxidation process is performed (518) that oxidizes the silicon nitride into silicon oxynitride.

    Abstract translation: 本发明通过提供在NMOS区内选择性地形成高k电介质层的制造方法来促进半导体制造。 在半导体器件（506）的芯和I / O区域中形成氧化物层。 氧化物层从器件的核心区域移除（508）。 在芯和I / O区域上形成高k电介质层（510）。 然后，从芯和I / O区域的PMOS区域去除高k电介质层（512）。 通过低温热处理在核心和I / O区域的PMOS区域内生长氮化硅层（516）。 随后，进行氧化处理（518），其将氮化硅氧化成氮氧化硅。

    Riser rotating control device
    7.
    发明申请
    Riser rotating control device 有权

    公开(公告)号：US20060108119A1

    公开(公告)日：2006-05-25

    申请号：US10995980

    申请日：2004-11-23

    Applicant: Thomas Bailey ,  James Chambers

    Inventor： Thomas Bailey ,  James Chambers

    IPC: E21B33/035

    CPC classification number: E21B33/085 ,  Y10S285/92

    Abstract: A latch assembly is connectable to a riser. A rotating control device can be positioned with the riser, sealing the rotating control device with the latch assembly and removably latching the rotating control device to the latch assembly and to the riser. The latch assembly can be remotely actuated. The latch assembly can provide an auxiliary safety mechanism to provide a backup actuation mechanism to unlatch the rotating control device from the latch assembly. The latch assembly can be bolted to the riser. Alternately, the latch assembly can be latched with the riser using a similar latching mechanism as used to latch the latch assembly to the rotating control device. A pressure transducer protector assembly can protect a transducer for monitoring wellbore pressure in the riser. A remote indicator panel can indicate the status of the latch assembly.

    Internal riser rotating control head
    8.
    发明申请
    Internal riser rotating control head 有权
    内部提升管旋转控制头

    公开(公告)号：US20060102387A1

    公开(公告)日：2006-05-18

    申请号：US11284308

    申请日：2005-11-21

    Applicant: Darryl Bourgoyne ,  Don Hannegan ,  Thomas Bailey ,  James Chambers ,  Timothy Wilson

    Inventor： Darryl Bourgoyne ,  Don Hannegan ,  Thomas Bailey ,  James Chambers ,  Timothy Wilson

    IPC: E21B15/02

    CPC classification number: E21B23/006 ,  E21B21/001 ,  E21B21/08 ,  E21B33/085 ,  E21B2021/006

    Abstract: A holding member provides for releasably positioning a rotating control head assembly in a subsea housing. The holding member engages an internal formation in the subsea housing to resist movement of the rotating control head assembly relative to the subsea housing. The rotating control head assembly is sealed with the subsea housing when the holding member engages the internal formation. An extendible portion of the holding member assembly extrudes an elastomer between an upper portion and a lower portion of the internal housing to seal the rotating control head assembly with the subsea housing. Pressure relief mechanisms release excess pressure in the subsea housing and a pressure compensation mechanism pressurize bearings in the bearing assembly at a predetermined pressure.

    Abstract translation: 保持构件用于将旋转的控制头组件可释放地定位在海底外壳中。 保持构件接合海底外壳内的内部结构，以抵抗旋转控制头组件相对于海底外壳的移动。 当保持构件接合内部结构时，旋转控制头组件被海底壳体密封。 保持构件组件的可延伸部分在弹性体的内部壳体的上部和下部之间挤压弹性体，以与海底壳体密封旋转的控制头组件。 压力释放机构释放海底外壳中的过压，并且压力补偿机构以预定的压力对轴承组件中的轴承加压。

    Pyrimidine carboxamides useful as inhibitors of PDE4 isozymes
    9.
    发明授权
    Pyrimidine carboxamides useful as inhibitors of PDE4 isozymes 失效
    可用作PDE4同功酶抑制剂的嘧啶甲酰胺

    公开(公告)号：US06740655B2

    公开(公告)日：2004-05-25

    申请号：US10181417

    申请日：2002-07-24

    Applicant: Thomas Victor Magee ,  Anthony Marfat ,  Robert James Chambers

    Inventor： Thomas Victor Magee ,  Anthony Marfat ,  Robert James Chambers

    IPC: A61K3138

    CPC classification number: C07D239/34 ,  A61K45/06 ,  C07D405/12 ,  C07D405/14 ,  C07D409/12 ,  C07D409/14 ,  C07D417/14

    Abstract: This invention is directed to compounds of the formula: wherein j is 0 or 1; k is 0 or 1; m is 0 or 1; n is 0 or 1; W is —O—; —S(═O)t—, where t is 0, 1, or 2; or —N(R3)—; where R3 is —H, —(C1-C3) alkyl, —OR12, phenyl, or benzyl; RC and RD have the same meaning as RA and RB, except that at least one of RC and RD must be —H; and the other variables are defined as set forth in the specification. The invention is also directed to pharmaceutical compositions comprising the above compounds and to methods of treating a subject suffering from a disease, disorder or condition mediated by the PDE4 isozyme, the method comprising administering a therapeutically effective amount of a compound as described above. The invention is particularly directed to methods of treating inflammatory, respiratory and allergic diseases and conditions, especially asthma; chronic obstructive pulmonary disease (COPD) including chronic bronchitis, emphysema, and bronchiectasis; chronic rhinitis; and chronic sinusitis.

    Abstract translation: 本发明涉及下式的化合物：其中j是0或1; k为0或1; m为0或1; n为0或1; W是-O-; -S（= O）t-，其中t为0,1或2; 或-N（R 3） - ; 其中R 3是-H， - （C 1 -C 3）烷基，-OR 12，苯基或苄基; R C和R D具有与R A和R B相同的含义，除了R C和R D中的至少一个必须为-H; 并且其他变量被定义为说明书中阐述的。 本发明还涉及包含上述化合物的药物组合物和治疗患有由PDE4同功酶介导的疾病，病症或病况的受试者的方法，所述方法包括施用治疗有效量的如上所述的化合物。 本发明特别涉及治疗炎性，呼吸和过敏性疾病和病症，特别是哮喘的方法; 慢性阻塞性肺疾病（COPD），包括慢性支气管炎，肺气肿和支气管扩张; 慢性鼻炎 和慢性鼻窦炎。

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