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发明申请
US20070042573A1 Methods of Forming Conductive Polysilicon Thin Films Via Atomic Layer Deposition and Methods of Manufacturing Semiconductor Devices Including Such Polysilicon Thin Films 有权
通过原子层沉积形成导电多晶硅薄膜的方法和制造包括这种多晶硅薄膜的半导体器件的方法

Methods of Forming Conductive Polysilicon Thin Films Via Atomic Layer Deposition and Methods of Manufacturing Semiconductor Devices Including Such Polysilicon Thin Films
摘要：
A method of forming a conductive polysilicon thin film and a method of manufacturing a semiconductor device using the same are provided. The method of forming a conductive polysilicon thin film may comprise simultaneously supplying a Si precursor having halogen elements as a first reactant and a dopant to a substrate to form a first reactant adsorption layer that is doped with impurities on the substrate and then supplying a second reactant having H (hydrogen) to the first reactant adsorption layer to react the H of the second reactant with the halogen elements of the first reactant to form a doped Si atomic layer on the substrate.
摘要（中）：

提供一种形成导电多晶硅薄膜的方法和使用其制造半导体器件的方法。 形成导电多晶硅薄膜的方法可以包括同时向衬底提供具有卤素元素的Si前体作为第一反应物和掺杂剂以形成在衬底上掺杂杂质的第一反应物吸附层，然后提供第二反应物 对第一反应物吸附层具有H（氢）以使第二反应物的H与第一反应物的卤素元素反应，以在衬底上形成掺杂的Si原子层。

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