发明申请
- 专利标题： Nonvolatile memory cell
- 专利标题（中）： 非易失性存储单元
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申请号： US11444295申请日： 2006-05-31
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公开(公告)号： US20070047292A1公开(公告)日： 2007-03-01
- 发明人: Joerg Berthold , Dieter Draxelmayr , Winfried Kamp , Michael Kund , Tim Schoenauer
- 申请人： Joerg Berthold , Dieter Draxelmayr , Winfried Kamp , Michael Kund , Tim Schoenauer
- 申请人地址： DE Munchen
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munchen
- 优先权： DE102005024897.7 20050531
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Nonvolatile memory cell, having a first resistor that is electrically programmable in a nonvolatile fashion, a second resistor that is electrically programmable in a nonvolatile fashion, a first leakage current reducing element connected between the first resistor and an operating potential, and a second leakage current reducing element connected between the second resistor and the operating potential.
公开/授权文献
- US07436694B2 Nonvolatile memory cell 公开/授权日：2008-10-14
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