发明申请
US20070048956A1 Interrupted deposition process for selective deposition of Si-containing films
审中-公开
用于选择性沉积含Si膜的中断沉积工艺
- 专利标题： Interrupted deposition process for selective deposition of Si-containing films
- 专利标题（中）： 用于选择性沉积含Si膜的中断沉积工艺
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申请号： US11213871申请日： 2005-08-30
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公开(公告)号： US20070048956A1公开(公告)日： 2007-03-01
- 发明人: Anthony Dip , Seungho Oh , Allen Leith
- 申请人： Anthony Dip , Seungho Oh , Allen Leith
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/331
- IPC分类号： H01L21/331
摘要：
A method is provided for selectively forming a Si-containing film on a substrate in an interrupted deposition process. The method includes providing a substrate containing a growth surface and a non-growth surface, and selectively forming the Si-containing film on the growth surface by exposing the substrate to HX gas while simultaneously exposing the substrate to a pulse of chlorinated silane gas. The Si-containing film can be a Si film or a SiGe film that is selectively formed on a Si or SiGe growth surface but not on an oxide, nitride, or oxynitride non-growth surface.