发明申请
- 专利标题： Methods of forming semiconductor constructions and capacitors
- 专利标题（中）： 形成半导体结构和电容器的方法
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申请号： US11218229申请日： 2005-08-31
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公开(公告)号： US20070048976A1公开(公告)日： 2007-03-01
- 发明人: Prashant Raghu
- 申请人： Prashant Raghu
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/302
摘要：
The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.
公开/授权文献
- US07713813B2 Methods of forming capacitors 公开/授权日：2010-05-11