发明申请
- 专利标题: NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE THEREFOR
- 专利标题(中): 镍合金硅胶包括其中的一种和其制造方法
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申请号: US11551374申请日: 2006-10-20
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公开(公告)号: US20070049022A1公开(公告)日: 2007-03-01
- 发明人: Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
- 申请人: Peijun Chen , Duofeng Yue , Amitabh Jain , Sue Crank , Thomas Bonifield , Homi Mogul
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments, Incorporated
- 当前专利权人: Texas Instruments, Incorporated
- 当前专利权人地址: US TX Dallas
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.