发明申请
US20070051948A1 TEST STRUCTURE AND METHOD FOR DETECTING AND STUDYING CRYSTAL LATTICE DISLOCATION DEFECTS IN INTEGRATED CIRCUIT DEVICES
失效
用于检测和研究集成电路设备中的晶体尺寸分离缺陷的测试结构和方法
- 专利标题: TEST STRUCTURE AND METHOD FOR DETECTING AND STUDYING CRYSTAL LATTICE DISLOCATION DEFECTS IN INTEGRATED CIRCUIT DEVICES
- 专利标题(中): 用于检测和研究集成电路设备中的晶体尺寸分离缺陷的测试结构和方法
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申请号: US11162128申请日: 2005-08-30
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公开(公告)号: US20070051948A1公开(公告)日: 2007-03-08
- 发明人: Jonathan Fales , Jerome Lasky
- 申请人: Jonathan Fales , Jerome Lasky
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L23/58
- IPC分类号: H01L23/58
摘要:
A test structure (200, 200′) having an array (224) of test devices (220) for detecting and studying defects that can occur in an integrated circuit device, e.g., a transistor (144), due to the relative positioning of one component (100) of the device with respect to another component (108) of the device. The test devices in the array are of a like kind, but vary in their configuration. The differences in the configurations are predetermined and selected with the intent of forcing defects to occur within at least some of the test devices. During testing, the responses of the test devices are sensed so as to determine whether or not a defect has occurred in any one or more of the test devices. If a defective test device is detected, the corresponding wafer (204) may be subjected to physical failure analysis for yield learning.
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