发明申请
- 专利标题： Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same
- 专利标题（中）： 包括电容器电极和接触插塞之间的直接接触的半导体器件及其制造方法
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申请号： US11491907申请日： 2006-07-25
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公开(公告)号： US20070054462A1公开(公告)日： 2007-03-08
- 发明人: Tohru Ozaki , Yoshinori Kumura , Yoshiro Shimojo , Susumu Shuto
- 申请人： Tohru Ozaki , Yoshinori Kumura , Yoshiro Shimojo , Susumu Shuto
- 优先权： JP2005-259420 20050907
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/8242 ; H01L21/00
摘要：
A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen affinity than the metal, and includes an oxide, a second adhesive film that is provided on the first contact plug and has a film thickness that is smaller than a film thickness of the first adhesive film, a first capacitor electrode that is provided on the contact plug and the first adhesive film, has a part in direct contact with the first contact plug, a capacitor insulation film that is provided on the first capacitor electrode, and a second capacitor electrode that is provided on the capacitor insulation film.
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