- 专利标题： SILICON-ON-INSULATOR (SOI) READ ONLY MEMORY (ROM) ARRAY AND METHOD OF MAKING A SOI ROM
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申请号： US11162472申请日： 2005-09-12
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公开(公告)号： US20070057323A1公开(公告)日： 2007-03-15
- 发明人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Jack Mandelman
- 申请人： Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Jack Mandelman
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A silicon-on-insulator (SOI) Read Only Memory (ROM), and a method of making the SOI ROM. ROM cells are located at the intersections of stripes in the surface SOI layer with orthogonally oriented wires on a conductor layer. Contacts from the wires connect to ROM cell diodes in the upper surface of the stripes. ROM cell personalization is the presence or absence of a diode and/or contact.