发明申请
- 专利标题: Method of controlling impurity doping and impurity doping apparatus
- 专利标题(中): 控制杂质掺杂和杂质掺杂装置的方法
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申请号: US10570787申请日: 2004-09-06
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公开(公告)号: US20070059848A1公开(公告)日: 2007-03-15
- 发明人: Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
- 申请人: Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
- 申请人地址: JP Osaka
- 专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址: JP Osaka
- 优先权: JP2003-321385 20030912
- 国际申请: PCT/JP04/13260 WO 20040906
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; H01L21/26 ; H01L21/04 ; H01L21/00
摘要:
Disclosed here is a method of controlling a dose amount of dopant to be doped into object (1) to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of object (1), the amount of ions having dopant in plasma that collide with object (1), and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of object (1), and a dose amount by ions from the determined amount of ions containing dopant that collide with object (1); and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
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