发明申请
US20070059893A1 Stacked capacitor and method for producing stacked capacitors for dynamic memory cells
失效
叠层电容器和用于制造用于动态存储单元的叠层电容器的方法
- 专利标题： Stacked capacitor and method for producing stacked capacitors for dynamic memory cells
- 专利标题（中）： 叠层电容器和用于制造用于动态存储单元的叠层电容器的方法
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申请号： US11518504申请日： 2006-09-07
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公开(公告)号： US20070059893A1公开(公告)日： 2007-03-15
- 发明人: Stephan Kudelka , Peter Moll , Stefan Jakschik , Odo Wunnicke
- 申请人： Stephan Kudelka , Peter Moll , Stefan Jakschik , Odo Wunnicke
- 优先权： DE102005042524.0 20050907
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method produces stacked capacitors for dynamic memory cells, in which a number of trenches (48) are formed in the masking layer (40), each trench (48) being arranged above a respective contact plug (26) and extending from the top (42) of the masking layer (40) to the contact plugs (26). A conductive layer (50) covers the side walls (49) of the trenches (48) and the contact plugs (26) in order to form a first electrode (60) of a stacked capacitor (12). In an upper region (63), which is remote from the contact stack (26), the conductive layer (50) is replaced by an insulating layer, so that it is not possible for a short circuit to arise in the event of any adhesion between adjacent electrodes.