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发明申请
US20070062440A1 Gallium nitride crystal substrate and method of producing same 失效
氮化镓晶体基板及其制造方法

Gallium nitride crystal substrate and method of producing same
摘要：
A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm2 to 10/cm2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).
摘要（中）：

一种低失真氮化镓晶体基板，包括具有确定的c轴和一定a轴的低位错单晶区域（Z），C平面生长区域（Y）具有平行于 低位错单晶区域（Z）的c轴和a轴，具有与低位错单晶区域（Z）的c轴相反的c轴的大量缺陷积聚区域（H） 与低位错单晶区域（Z）的a轴平行的轴线和0.1 / cm 2至10 / cm 2的c轴总芯部区域（F ）含有至少一个具有与低位错单晶区域（Z）的c轴平行的c轴和不同于低位错单晶区域（Z）的a轴的a轴的晶体。

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