发明申请
US20070063251A1 Semiconductor product including logic, non-volatile memory and volatile memory devices and method for fabrication thereof
有权
包括逻辑，非易失性存储器和易失性存储器件的半导体产品及其制造方法
- 专利标题： Semiconductor product including logic, non-volatile memory and volatile memory devices and method for fabrication thereof
- 专利标题（中）： 包括逻辑，非易失性存储器和易失性存储器件的半导体产品及其制造方法
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申请号： US11233344申请日： 2005-09-22
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公开(公告)号： US20070063251A1公开(公告)日： 2007-03-22
- 发明人: Kuo-Chi Tu , Hsiang-Fan Lee
- 申请人： Kuo-Chi Tu , Hsiang-Fan Lee
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor product and a method for fabricating the semiconductor product employ a semiconductor substrate. The semiconductor substrate has a logic region having a logic device formed therein, a non-volatile memory region having a non-volatile memory device formed therein and a volatile memory device having a volatile memory device formed therein. Gate electrode and capacitor plate layer components within each of the devices may be formed simultaneously incident to patterning of a single blanket gate electrode material layer
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