发明申请
- 专利标题： Semiconductor device with charge pump booster circuit
- 专利标题（中）： 具有电荷泵升压电路的半导体器件
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申请号： US11521675申请日： 2006-09-14
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公开(公告)号： US20070063762A1公开(公告)日： 2007-03-22
- 发明人: Kenji Yoshida , Tooru Sudou , Sung Park
- 申请人： Kenji Yoshida , Tooru Sudou , Sung Park
- 优先权： JPJP2005-271466 20050920
- 主分类号： G05F1/10
- IPC分类号： G05F1/10
摘要：
Provided is a charge pump booster circuit capable of outputting desired boosted voltage that is not limited to an integral multiple of input voltage and further outputting stable boosted voltage even if a load fluctuates. In the charge pump booster circuit, gate voltage of a transistor for pumping is controlled according to voltage, which is a feedback of boosted voltage, to control the boosted voltage.
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