Semiconductor device with charge pump booster circuit
    1.
    发明申请
    Semiconductor device with charge pump booster circuit 审中-公开
    具有电荷泵升压电路的半导体器件

    公开(公告)号:US20070063762A1

    公开(公告)日:2007-03-22

    申请号:US11521675

    申请日:2006-09-14

    IPC分类号: G05F1/10

    CPC分类号: H02M3/07

    摘要: Provided is a charge pump booster circuit capable of outputting desired boosted voltage that is not limited to an integral multiple of input voltage and further outputting stable boosted voltage even if a load fluctuates. In the charge pump booster circuit, gate voltage of a transistor for pumping is controlled according to voltage, which is a feedback of boosted voltage, to control the boosted voltage.

    摘要翻译: 提供了一种电荷泵升压电路,其能够输出不限于输入电压的整数倍的所需升压电压,并且即使负载波动也可输出稳定的升压电压。 在电荷泵升压电路中,用于泵浦的晶体管的栅极电压根据作为升压电压的反馈的电压来控制,以控制升压电压。