- 专利标题： Method for fabrication of semiconductor device
-
申请号： US11601795申请日： 2006-11-20
-
公开(公告)号： US20070066029A1公开(公告)日： 2007-03-22
- 发明人: Takeshi Kamikawa , Eiji Yamada , Masahiro Araki
- 申请人： Takeshi Kamikawa , Eiji Yamada , Masahiro Araki
- 申请人地址： JP Osaka-shi
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2004-139919 20040510; JP2004-172291 20040610
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/8242
摘要：
On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.
公开/授权文献
- US07772611B2 Nitride semiconductor device with depressed portion 公开/授权日：2010-08-10