发明申请
US20070066064A1 Methods to avoid unstable plasma states during a process transition
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在过程转换过程中避免不稳定的等离子体状态的方法
- 专利标题： Methods to avoid unstable plasma states during a process transition
- 专利标题（中）： 在过程转换过程中避免不稳定的等离子体状态的方法
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申请号： US11372752申请日： 2006-03-10
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公开(公告)号： US20070066064A1公开(公告)日： 2007-03-22
- 发明人: Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
- 申请人： Michael Kutney , Daniel Hoffman , Gerardo Delgadino , Ezra Gold , Ashok Sinha , Xiaoye Zhao , Douglas Burns , Shawming Ma
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G01L21/30 ; H01L21/302
摘要：
In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.
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