公开(公告)号：US20080110860A1

公开(公告)日：2008-05-15

申请号：US11751592

申请日：2007-05-21

申请人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

发明人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC分类号： H01L21/302

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32697

摘要： A method for processing a workpiece in a plasma reactor. The method comprises constraining plasma in the chamber away from the floor of the pumping annulus, providing an annular baffle while compensating for asymmetry of gas flow attributable to the pumping port, and providing a gas flow equalizer below the baffle having an eccentrically shaped opening. The method further includes modifying the radial distribution of plasma ion density and providing a magnetic plasma steering field having an edge high plasma ion density distribution tendency. The method further comprises locating the baffle at a sufficient distance below the workpiece to provide an edge low plasma ion density distribution tendency that compensates the edge high plasma ion density distribution tendency of the magnetic plasma steering field.

摘要翻译： 一种在等离子体反应器中处理工件的方法。 该方法包括将腔室中的等离子体约束在泵送环空的地板之外，提供环形挡板，同时补偿归因于泵送端口的气流的不对称性，以及在挡板下方提供具有偏心形状的开口的气流均衡器。 该方法还包括修改等离子体离子密度的径向分布并提供具有边缘高等离子体离子密度分布倾向的磁等离子体转向场。 该方法还包括将挡板定位在工件下方足够的距离处，以提供补偿磁等离子体转向场的边缘高等离子体离子密度分布趋势的边缘低等离子体离子密度分布趋势。

公开(公告)号：US20070023145A1

公开(公告)日：2007-02-01

申请号：US11531479

申请日：2006-09-13

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

IPC分类号： C23F1/00

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

摘要翻译： 本发明的实施方案一般涉及等离子体反应器。 在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。 导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。 台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。 内壁与上外壁和下外壁相对设置。 在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。

公开(公告)号：US20070066064A1

公开(公告)日：2007-03-22

申请号：US11372752

申请日：2006-03-10

申请人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

发明人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

IPC分类号： H01L21/00 ,  G01L21/30 ,  H01L21/302

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/76807

摘要： In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one process step to another process step. The method includes performing a pre-transition compensation of at least one other process parameter so as to avoid unstable plasma states by inhibiting formation of a parasitic plasma during the process transition. In some implementations, a method is provided for processing a workpiece in plasma processing chamber, which includes inhibiting deviations from an expected etch-rate distribution by avoiding unstable plasma states during a process transition from one process step to another process step.

摘要翻译： 在一些实施方案中，在等离子体处理室中提供了一种方法，用于在从一个处理步骤到另一个处理步骤的过程转变期间稳定蚀刻速率分布。 该方法包括执行至少一个其它过程参数的预过渡补偿，以便通过在过程转换期间抑制寄生等离子体的形成来避免不稳定的等离子体状态。 在一些实施方案中，提供了一种用于处理等离子体处理室中的工件的方法，其包括通过在从一个工艺步骤转换到另一工艺步骤的过程转变期间避免不稳定的等离子体状态来抑制预期蚀刻速率分布的偏差。

公开(公告)号：US20060193102A1

公开(公告)日：2006-08-31

申请号：US11381399

申请日：2006-05-03

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas Buchberger

IPC分类号： H01T23/00

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

摘要翻译： 本发明的实施例一般涉及在等离子体处理室中使用的环形环。 在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。 台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。 环形环可以由诸如碳化硅和铝的导电材料制成。

公开(公告)号：US07780866B2

公开(公告)日：2010-08-24

申请号：US11751592

申请日：2007-05-21

申请人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

发明人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01J37/3266 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32697

摘要： A method for processing a workpiece in a plasma reactor. The method comprises constraining plasma in the chamber away from the floor of the pumping annulus, providing an annular baffle while compensating for asymmetry of gas flow attributable to the pumping port, and providing a gas flow equalizer below the baffle having an eccentrically shaped opening. The method further includes modifying the radial distribution of plasma ion density and providing a magnetic plasma steering field having an edge high plasma ion density distribution tendency. The method further comprises locating the baffle at a sufficient distance below the workpiece to provide an edge low plasma ion density distribution tendency that compensates the edge high plasma ion density distribution tendency of the magnetic plasma steering field.

摘要翻译： 一种在等离子体反应器中处理工件的方法。 该方法包括将腔室中的等离子体约束在泵送环空的地板之外，提供环形挡板，同时补偿归因于泵送端口的气流的不对称性，以及在挡板下方提供具有偏心形状的开口的气流均衡器。 该方法还包括修改等离子体离子密度的径向分布并提供具有边缘高等离子体离子密度分布倾向的磁等离子体转向场。 该方法还包括将挡板定位在工件下方足够的距离处，以提供补偿磁等离子体转向场的边缘高等离子体离子密度分布趋势的边缘低等离子体离子密度分布趋势。

公开(公告)号：US20050167051A1

公开(公告)日：2005-08-04

申请号：US11046656

申请日：2005-01-28

申请人： Daniel Hoffman ,  Roger Lindley ,  Michael Kutney ,  Martin Salinas ,  Hamid Tavassoli ,  Keiji Horioka ,  Douglas Buchberger

发明人： Daniel Hoffman ,  Roger Lindley ,  Michael Kutney ,  Martin Salinas ,  Hamid Tavassoli ,  Keiji Horioka ,  Douglas Buchberger

IPC分类号： H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32091 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma reactor for processing a workpiece, includes a vacuum chamber defined by a sidewall and ceiling, and a workpiece support pedestal having a workpiece support surface in the chamber and facing the ceiling and including a cathode electrode. An RF power generator is coupled to the cathode electrode. Plasma distribution is controlled by an external annular inner electromagnet in a first plane overlying the workpiece support surface, an external annular outer electromagnet in a second plane overlying the workpiece support surface and having a greater diameter than the inner electromagnet, and an external annular bottom electromagnet in a third plane underlying the workpiece support surface. D.C. current supplies are connected to respective ones of the inner, outer and bottom electromagnets.

摘要翻译： 一种用于加工工件的等离子体反应器，包括由侧壁和天花板限定的真空室，以及在所述室中具有工件支撑表面并且面向天花板并且包括阴极电极的工件支撑基座。 RF发生器耦合到阴极电极。 等离子体分布由覆盖工件支撑表面的第一平面中的外部环形内部电磁体控制，覆盖工件支撑表面并且具有比内部电磁体更大的直径的第二平面中的外部环形外部电磁体以及外部环形底部电磁体 在工件支撑表面下方的第三平面内。 内部，外部和底部电磁铁中的相应电源连接到电流源。

公开(公告)号：US07674353B2

公开(公告)日：2010-03-09

申请号：US11531479

申请日：2006-09-13

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas A. Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas A. Buchberger

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

摘要翻译： 本发明的实施方案一般涉及等离子体反应器。 在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。 导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。 台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。 内壁与上外壁和下外壁相对设置。 在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。

公开(公告)号：US07618516B2

公开(公告)日：2009-11-17

申请号：US11381399

申请日：2006-05-03

申请人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas A. Buchberger

发明人： Kallol Bera ,  Daniel Hoffman ,  Yan Ye ,  Michael Kutney ,  Douglas A. Buchberger

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32642 ,  H01J37/32082 ,  H01J37/32623 ,  Y10S156/915

摘要： The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

摘要翻译： 本发明的实施例一般涉及在等离子体处理室中使用的环形环。 在一个实施例中，环形环包括内壁，上外壁，下外壁，限定在上外壁和下外壁之间的台阶，顶表面和底壁。 台阶从下外壁向上和向外形成，并从上外壁向内和向下形成。 环形环可以由诸如碳化硅和铝的导电材料制成。

公开(公告)号：US20080110567A1

公开(公告)日：2008-05-15

申请号：US11751575

申请日：2007-05-21

申请人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

发明人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC分类号： H01L21/306

CPC分类号： H01J37/32633 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma reactor with plasma confinement and plasma radial distribution capability. The reactor comprises a reactor chamber including a side wall and a workpiece support pedestal in the chamber and defining a pumping annulus between the pedestal and side wall and a pumping port at a bottom of the pumping annulus. The reactor further comprises a means for confining gas flow in an axial direction through the pumping annulus to prevent plasma from flowing to the pumping port. The reactor further comprises a means for compensating for asymmetry of gas flow pattern across the pedestal arising from placement of the pumping port. The reactor further comprises a means for controlling plasma distribution having an inherent tendency to promote edge-high plasma density distribution. The means for confining gas flow is depressed below the workpiece support sufficiently to compensate for the edge-high plasma distribution tendency of the means for controlling plasma distribution.

摘要翻译： 一种具有等离子体约束和等离子体径向分布能力的等离子体反应器。 该反应器包括反应室，该反应室包括室中的侧壁和工件支撑基座，并且在基座和侧壁之间限定了泵送环形空间以及在泵送环空的底部的泵送端口。 反应器还包括用于将气流沿轴向限制通过泵送环的装置，以防止等离子体流到泵送端口。 所述反应器还包括用于补偿穿过所述基座的由所述泵送端口的放置产生的气流图案的不对称性的装置。 反应器还包括用于控制具有促进边缘 - 高等离子体密度分布的固有倾向的等离子体分布的装置。 用于限制气流的装置在工件支撑下方被压下，足以补偿用于控制等离子体分布的装置的边缘 - 高等离子体分布趋势。

公开(公告)号：US20070048882A1

公开(公告)日：2007-03-01

申请号：US11366301

申请日：2006-03-01

申请人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

发明人： Michael Kutney ,  Daniel Hoffman ,  Gerardo Delgadino ,  Ezra Gold ,  Ashok Sinha ,  Xiaoye Zhao ,  Douglas Burns ,  Shawming Ma

IPC分类号： H01L21/00

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/67253 ,  H01L21/76807

摘要： In some implementations, a method is provided for inhibiting charge damage in a plasma processing chamber during a process transition from one process step to another process step, including performing a pre-transition compensation of at least one process parameter so as to inhibit charge damage from occurring during the process transition. In some implementations, a method is provided for inhibiting charge damage during a process transition from one process step to another process step, which includes changing at least one process parameter with a smooth non-linear transition. In some implementations, a method is provided which includes sequentially changing selected process parameters such that a plasma is able to stabilize after each change prior to changing a next selected process parameter.

摘要翻译： 在一些实施方案中，提供了一种用于在从一个工艺步骤转移到另一个工艺步骤的过程转变期间抑制等离子体处理室中的电荷损伤的方法，包括对至少一个工艺参数执行预过渡补偿以便抑制电荷损伤 在过程转换期间发生。 在一些实施方案中，提供了一种用于在从一个处理步骤转移到另一个处理步骤的过程中抑制电荷损伤的方法，其包括通过平滑的非线性跃迁来改变至少一个过程参数。 在一些实施方式中，提供了一种方法，其包括顺序地改变所选择的过程参数，使得在改变下一个所选择的过程参数之前等离子体能够在每次变化之后稳定。