发明申请
US20070069202A1 Light-emitting device comprising semiconductor nanocrystal layer free of voids and method for producing the same 审中-公开
包含无空隙的半导体纳米晶层的发光器件及其制造方法

  • 专利标题: Light-emitting device comprising semiconductor nanocrystal layer free of voids and method for producing the same
  • 专利标题(中): 包含无空隙的半导体纳米晶层的发光器件及其制造方法
  • 申请号: US11390851
    申请日: 2006-03-28
  • 公开(公告)号: US20070069202A1
    公开(公告)日: 2007-03-29
  • 发明人: Byoung ChoiByung KimKyung ChoSoon KwonJae Choi
  • 申请人: Byoung ChoiByung KimKyung ChoSoon KwonJae Choi
  • 优先权: KR2005-90082 20050927
  • 主分类号: H01L51/00
  • IPC分类号: H01L51/00
Light-emitting device comprising semiconductor nanocrystal layer free of voids and method for producing the same
摘要:
A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.
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