公开(公告)号：US20070138951A1

公开(公告)日：2007-06-21

申请号：US11641842

申请日：2006-12-20

申请人： Hye Park ,  Byoung Choi ,  Sun Yang ,  Youn Oh ,  Eun Lee ,  Won Kang

发明人： Hye Park ,  Byoung Choi ,  Sun Yang ,  Youn Oh ,  Eun Lee ,  Won Kang

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： H01L27/144 ,  H01L27/3269 ,  H01L31/145 ,  H01L31/153 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

摘要： An organic light-emitting display includes a substrate, a thin film transistor on the substrate, an organic light-emitting diode electrically connected to the thin film transistor, and a photo sensor having a plurality of photo diodes connected to one another in parallel.

摘要翻译： 有机发光显示器包括基板，基板上的薄膜晶体管，与薄膜晶体管电连接的有机发光二极管和具有并联连接的多个光电二极管的光电传感器。

公开(公告)号：US20070128808A1

公开(公告)日：2007-06-07

申请号：US11447328

申请日：2006-06-06

申请人： Byoung Choi ,  Jong Kim ,  Eun Lee

发明人： Byoung Choi ,  Jong Kim ,  Eun Lee

IPC分类号： H01L21/336 ,  H01L21/44

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  C30B29/60 ,  H01L29/0673 ,  H01L29/0676 ,  Y10T428/249994

摘要： Disclosed herein is a method for producing nanowires. The method comprises the steps of providing a porous template with a plurality of holes in the form of tubes, filling the tubes with nanoparticles or nanoparticle precursors, and forming the filled nanoparticles or nanoparticle precursors into nanowires. According to the method, highly rectilinear and well-ordered nanowires can be produced in a simple manner.

摘要翻译： 本文公开了一种生产纳米线的方法。 该方法包括以下步骤：提供具有管形式的多个孔的多孔模板，用纳米颗粒或纳米颗粒前体填充管，并将填充的纳米颗粒或纳米颗粒前体形成纳米线。 根据该方法，可以以简单的方式制备高度直线和有序的纳米线。

公开(公告)号：US20050232036A1

公开(公告)日：2005-10-20

申请号：US10879552

申请日：2004-06-29

申请人： Byoung Choi

发明人： Byoung Choi

IPC分类号： G11C7/00 ,  G11C8/12 ,  G11C29/00

CPC分类号： G11C8/12 ,  G11C29/781 ,  G11C29/785

摘要： Provided is directed to a semiconductor memory device and a method of driving the same capable of improving a repair efficiency with comparison to the conventional method which repairs all the redundancy row even when a defective cell is occurred in only one cell, by including: a memory cell array which is comprised of at least more than one redundancy block and redundancy segment by means of dividing it into a plurality of blocks toward a row direction and then dividing the blocks into a plurality of segments; a control circuit for storing a repair information of a defective cell and for repairing the segment generating the defective cell to the redundancy segment according to the repair information by inputting a row address signal and a column address signal.

摘要翻译： 本发明涉及一种半导体存储器件及其驱动方法，该半导体存储器件及其驱动方法能够与仅在一个单元中发生缺陷单元时修复所有冗余行的常规方法相比提高修复效率，包括：存储器 单元阵列，其由至少一个冗余块和冗余段组成，通过将其划分为多个块朝向行方向，然后将块划分成多个段; 控制电路，用于通过输入行地址信号和列地址信号来存储缺陷单元的修复信息，并根据修复信息修复产生缺陷单元的段到冗余段。

公开(公告)号：US20050134586A1

公开(公告)日：2005-06-23

申请号：US10831153

申请日：2004-04-26

申请人： Bon Koo ,  Chang Chu ,  Jae Kim ,  Byoung Choi ,  Young Choi

发明人： Bon Koo ,  Chang Chu ,  Jae Kim ,  Byoung Choi ,  Young Choi

IPC分类号： G06T17/00 ,  G06T17/20

CPC分类号： G06T17/20 ,  G06T2210/56

摘要： The present invention relates to a method for generating a mesh model representing a 3D surface from unorganized 3D points extracted from a 3D scanner by using a shrink-wrapping scheme of boundary cells. A method for generating 3-dimensional mesh according to the present invention comprises the steps of: (a) receiving unorganized 3D point coordinates extracted by a 3D scanner or a digitizer; (b) extracting a minimum bounding box including all the point coordinates and uniformly dividing the extracted bounding box into cells of a predetermined size; (c) extracting a boundary cell including at least one point from the cells, extracting a boundary surface from all the boundary cells, and generating an initial mesh by summing extracted boundary surfaces; (d) calculating distances between each vertex constituting the mesh and the several points, finding a nearest point, and moving the vertex to the nearest point; and (e) averaging location of each shrink-wrapped vertex and location of the neighboring vertexes, and moving the shrink-wrapped vertex to center of neighboring vertexes.

摘要翻译： 本发明涉及一种用于通过使用边界单元的收缩包装方案从3D扫描器提取的从未组织的3D点生成表示3D表面的网格模型的方法。 根据本发明的用于生成三维网格的方法包括以下步骤：（a）接收由3D扫描仪或数字化仪提取的无组织3D点坐标; （b）提取包括所有点坐标的最小边界框，并将提取的边界框均匀地划分成预定大小的单元格; （c）从所述单元提取包括至少一个点的边界单元，从所有边界单元提取边界表面，并通过对提取的边界表面求和来生成初始网格; （d）计算构成网格的每个顶点与几个点之间的距离，找到最近的点，并将顶点移动到最近点; 和（e）平均每个收缩包装顶点的位置和相邻顶点的位置，并将收缩包装的顶点移动到相邻顶点的中心。

公开(公告)号：US20070241662A1

公开(公告)日：2007-10-18

申请号：US11442875

申请日：2006-05-30

申请人： Byoung Choi ,  Kyung Cho ,  Soon Kwon ,  Eun Lee ,  Jae Lee

发明人： Byoung Choi ,  Kyung Cho ,  Soon Kwon ,  Eun Lee ,  Jae Lee

IPC分类号： H05B33/00

CPC分类号： H05B33/20 ,  Y10T428/2929

摘要： An electroluminescent element and an electronic device including the electroluminescent element include a glass template having a silica layer as a matrix, electrodes and a luminescent material. Since the electroluminescent element according to the present invention includes silica as a matrix, the electroluminescent element has a stabilized structure even though a space between the luminescent layer and the electrode of the glass template is not filled. Further, such an electroluminescent element may be easily prepared, and thus may be effectively applied to various electronic devices, such as display devices, illumination devices and backlight units.

摘要翻译： 包括电致发光元件的电致发光元件和电子器件包括具有二氧化硅层作为基体的玻璃模板，电极和发光材料。 由于根据本发明的电致发光元件包括二氧化硅作为基质，所以即使未填充玻璃模板的发光层和电极之间的空间，电致发光元件也具有稳定的结构。 此外，这种电致发光元件可以容易地制备，并且因此可以有效地应用于诸如显示装置，照明装置和背光单元的各种电子装置。

公开(公告)号：US20070122978A1

公开(公告)日：2007-05-31

申请号：US11604222

申请日：2006-11-27

申请人： Byoung Choi ,  Ki Lee ,  Ho Chung ,  Jun Yi ,  Sung Jung ,  Hyun Kim ,  Jun Kim

发明人： Byoung Choi ,  Ki Lee ,  Ho Chung ,  Jun Yi ,  Sung Jung ,  Hyun Kim ,  Jun Kim

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/513

摘要： A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

摘要翻译： 非易失性存储器件包括在衬底上的缓冲氧化膜; 缓冲氧化膜上的多晶硅层; 所述多晶硅层上的硅氮化物（SiON）层，所述SiON层上的第一绝缘体层，所述第一绝缘体上的氮化物膜，所述氮化物膜上的第二绝缘体层，所述第二绝缘体上的电极和源极 /漏极在多晶硅层。

公开(公告)号：US20070111493A1

公开(公告)日：2007-05-17

申请号：US11506091

申请日：2006-08-17

申请人： Eun Lee ,  Byoung Choi

发明人： Eun Lee ,  Byoung Choi

IPC分类号： H01L21/44 ,  H01L23/52

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L33/18 ,  Y10S977/70 ,  Y10S977/762

摘要： Nanowires methods for producing the nanowires are provided. The nanowires include a plurality of metal nanodots uniformly disposed therein, and a core portion, wherein each of the plurality of metal nanodots is coupled to the core portion. According to the method, metal nanodots can be uniformly disposed in the nanowires, and nanowires having various physical properties can be produced by controlling the size and interval of the nanodots. Therefore, the nanowires can be effectively used in a variety of applications, including electronic devices, such as field effect transistors (FETs), sensors, photodetectors, light emitting diodes (LEDs), and laser diodes (LDs).

摘要翻译： 提供了制备纳米线的纳米线方法。 纳米线包括均匀地设置在其中的多个金属纳米点和芯部分，其中多个金属纳米点中的每一个耦合到芯部分。 根据该方法，金属纳米点可以均匀地设置在纳米线中，并且可以通过控制纳米点的尺寸和间隔来制造具有各种物理性质的纳米线。 因此，纳米线可以有效地用于各种应用中，包括诸如场效应晶体管（FET），传感器，光电检测器，发光二极管（LED）和激光二极管（LD）的电子器件。

公开(公告)号：US20070069202A1

公开(公告)日：2007-03-29

申请号：US11390851

申请日：2006-03-28

申请人： Byoung Choi ,  Byung Kim ,  Kyung Cho ,  Soon Kwon ,  Jae Choi

发明人： Byoung Choi ,  Byung Kim ,  Kyung Cho ,  Soon Kwon ,  Jae Choi

IPC分类号： H01L51/00

CPC分类号： H01L51/5012 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/08 ,  H01L33/18

摘要： A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.

摘要翻译： 提供了包括半导体纳米晶层的发光器件和用于制造发光器件的方法。 发光器件包括其填充有填充材料的空隙的半导体纳米晶体层。 根据发光装置，由于在半导体纳米晶层的纳米晶粒之间形成的空隙填充有填充材料，所以通过空隙的电流泄漏的发生被最小化，这使得器件具有延长的使用寿命，高发光度 效率和稳定性的提高。

公开(公告)号：US20060286701A1

公开(公告)日：2006-12-21

申请号：US11315628

申请日：2005-12-23

申请人： Seung Moon ,  Byoung Choi

发明人： Seung Moon ,  Byoung Choi

IPC分类号： H01L21/66 ,  H01L21/00 ,  H01L23/58

CPC分类号： H01L21/67288 ,  G02F1/1303 ,  G02F1/1309 ,  G02F1/1337 ,  G02F1/133784 ,  H01L21/6715

摘要： An apparatus for inspecting an alignment film and a method for fabricating a liquid crystal display device using the same are disclosed. By changing a spraying structure of a steam inspecting unit to check whether an alignment film is defective or not, a water splash phenomenon can be prevented and spraying can be performed uniformly on a large-scale glass. The apparatus for inspecting an alignment film comprises a first steam generating unit for generating first steam; a second steam generating unit for generating second steam by using the first steam as a heat source; and a steam spraying unit for spraying the second steam onto a substrate of a substrate to inspect an alignment film formed on the substrate.

公开(公告)号：US20060177341A1

公开(公告)日：2006-08-10

申请号：US11097726

申请日：2005-03-31

申请人： Yong Jeong ,  Jong Baek ,  Byoung Choi ,  Sang Park ,  Myung Lee ,  Je Bang ,  Jeong Park ,  Jun Kim ,  Hyun Kim ,  Youn Jung

发明人： Yong Jeong ,  Jong Baek ,  Byoung Choi ,  Sang Park ,  Myung Lee ,  Je Bang ,  Jeong Park ,  Jun Kim ,  Hyun Kim ,  Youn Jung

IPC分类号： C22C16/00

CPC分类号： C22C16/00 ,  C22F1/186

摘要： The present invention relates to a zirconium based alloy composite having an excellent creep resistance and, more particularly, to a zirconium based alloy composite finally heat-treated to have the degree of recrystallization in the range of 40˜70% in order to improve the creep resistance. The zirconium based alloy comprises 0.8˜1.8 wt. % niobium (Nb); 0.38˜0.50 wt. % tin (Sn); one or more elements selected from 0.1˜0.2 wt. % iron (Fe), 0.05˜0.15 wt. % copper (Cu), and 0.12 wt. % chromium (Cr); 0.10˜0.15 wt. % oxygen (O); 0.006˜0.010 wt. % carbon (C); 0.006˜0.010 wt. % silicon (Si); 0.0005˜0.0020 wt. % sulfur (S); and the balance zirconium (Zr). The zirconium alloy manufactured with the composition in accordance with the present invention has an excellent creep resistance compared to a conventional Zircaloy-4, and may effectively be used as a nuclear cladding tube, supporting lattice and inner structures of reactor core in the nuclear power plant utilizing light or heavy water reactor.

摘要翻译： 本发明涉及具有优异抗蠕变性的锆基合金复合材料，更具体地说，涉及一种锆基合金复合材料，其最终被热处理以具有在40〜70％范围内的重结晶度，以改善蠕变 抵抗性。 锆基合金包含0.8〜1.8wt。 ％铌（Nb）; 0.38〜0.50重量％ 锡（Sn）; 一种或多种选自0.1〜0.2wt。 ％铁（Fe），0.05〜0.15wt。 ％铜（Cu）和0.12重量％ ％铬（Cr）; 0.10〜0.15wt。 ％氧（O）; 0.006〜0.010重量％ ％碳（C）; 0.006〜0.010重量％ ％硅（Si）; 0.0005〜0.0020重量 ％硫（S）; 余量为锆（Zr）。 按照本发明的组合物制造的锆合金与常规的Zircaloy-4相比具有优异的抗蠕变性，并且可以有效地用作核包层管，在核电站中支撑晶格和反应堆芯的内部结构 利用轻水或重水反应堆。