A power semiconductor component includes a semiconductor body and a field electrode. The semiconductor body has a drift zone of a first conduction type and a further component defining a junction therebetween. The junction is configured to cause a space charge zone to propagate when a reverse voltage is applied to the junction. The field electrode is arranged adjacent to the drift zone, and is insulated from the semiconductor body by at least a dielectric layer. The dielectric layer has a first section and a second section, the first section arranged nearer to the junction and having a higher dielectric constant than the second section.