Invention Application
- Patent Title: Method and apparatus for driving a power MOS device as a synchronous rectifier
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Application No.: US11549361Application Date: 2006-10-13
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Publication No.: US20070069289A1Publication Date: 2007-03-29
- Inventor: Bruno Nadd , Xavier de Frutos , Andre Mourrier
- Applicant: Bruno Nadd , Xavier de Frutos , Andre Mourrier
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A synchronous rectifier comprising a MOSFET device, and a gate driver for driving the gate of the MOSFET device, the MOSFET device comprising first and second MOSFET transistors coupled with their drain-source paths in parallel to receive an alternating current waveform for rectification by the drain-source paths of the MOSFET transistors, the first transistor having a low Rdson and the second transistor having a high Rdson whereby the apparent Rdson of the MOSFET device is increased when the current through the MOSFET device is below a threshold thereby enabling zero crossing detection.
Public/Granted literature
- US07948296B2 Method and apparatus for driving a power MOS device as a synchronous rectifier Public/Granted day:2011-05-24
Information query
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