Invention Application
US20070069302A1 Method of fabricating CMOS devices having a single work function gate electrode by band gap engineering and article made thereby
审中-公开
通过带隙工程制造具有单功函数栅电极的CMOS器件和由此制成的制品的方法
- Patent Title: Method of fabricating CMOS devices having a single work function gate electrode by band gap engineering and article made thereby
- Patent Title (中): 通过带隙工程制造具有单功函数栅电极的CMOS器件和由此制成的制品的方法
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Application No.: US11238445Application Date: 2005-09-28
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Publication No.: US20070069302A1Publication Date: 2007-03-29
- Inventor: Been-Yih Jin , Robert Chau , Brian Doyle , Jack Kavalieros , Suman Datta , Mark Doczy , Matthew Metz , Justin Brask
- Applicant: Been-Yih Jin , Robert Chau , Brian Doyle , Jack Kavalieros , Suman Datta , Mark Doczy , Matthew Metz , Justin Brask
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238
Abstract:
A method utilizing a common gate electrode material with a single work function for both the pMOS and nMOS transistors where the magnitude of the transistor threshold voltages is modified by semiconductor band engineering and article made thereby.
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