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发明申请
US20070069310A1 Semiconductor controlled rectifiers for electrostatic discharge protection 审中-公开
半导体控制整流器用于静电放电保护

Semiconductor controlled rectifiers for electrostatic discharge protection
摘要：
A silicon controlled rectifier (SCR) may include a first well and a second well formed within a substrate. A first junction region and a second junction region may be formed within the first well. A third junction region may include a first portion formed within the first well and a second portion formed within the substrate. A fourth junction region may include a first portion formed within the second well and a second portion formed within the substrate. A gate electrode may be formed on the substrate between the third junction region and the fourth junction region. A fifth junction region may be formed within a region of the substrate.
摘要（中）：

可控硅整流器（SCR）可以包括在衬底内形成的第一阱和第二阱。 第一接合区域和第二接合区域可以形成在第一阱内。 第三结区域可以包括形成在第一阱内的第一部分和形成在衬底内的第二部分。 第四结区域可以包括形成在第二阱内的第一部分和形成在衬底内的第二部分。 可以在第三接合区域和第四接合区域之间的衬底上形成栅电极。 第五结区域可以形成在衬底的区域内。

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