发明申请
US20070069362A1 Method for manufacturing semiconductor device, semiconductor device and apparatus comprising same
有权
制造半导体器件的方法，半导体器件及包括该器件的器件
- 专利标题： Method for manufacturing semiconductor device, semiconductor device and apparatus comprising same
- 专利标题（中）： 制造半导体器件的方法，半导体器件及包括该器件的器件
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申请号： US11525952申请日： 2006-09-25
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公开(公告)号： US20070069362A1公开(公告)日： 2007-03-29
- 发明人: Satoshi Isa , Satoshi Itaya , Mitsuaki Katagiri , Fumiyuki Osanai , Hiroki Fujisawa
- 申请人： Satoshi Isa , Satoshi Itaya , Mitsuaki Katagiri , Fumiyuki Osanai , Hiroki Fujisawa
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 优先权： JP2005-283020 20050928
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
Disclosed is a method for manufacturing a method for manufacturing a semiconductor device which comprises a substrate, a semiconductor chip and a plurality of terminals. The method comprises preparing the substrate comprising an insulator which is formed with a plurality of signal lines, a plurality of power lines related to the plurality of signal lines and a plurality of ground lines related to the plurality of signal lines on the insulator in accordance with a predetermined layout. Each of the plurality of line groups comprises one of the power lines, one of the ground lines and one of the signal lines arranged between the one of the power lines and the one of the ground lines. Each of the plurality of line groups shares any one of the power line and the ground line with a neighboring line group of the plurality of line groups.
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