发明申请
- 专利标题： Interconnect structure with polygon cell structures
- 专利标题（中）： 互连结构与多边形单元结构
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申请号： US11237356申请日： 2005-09-28
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公开(公告)号： US20070069381A1公开(公告)日： 2007-03-29
- 发明人: Ding-Chung Lu , Chao-Hsiung Wang , Cheng-Yuan Tsai
- 申请人： Ding-Chung Lu , Chao-Hsiung Wang , Cheng-Yuan Tsai
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52
摘要：
Interconnect structures with polygonal cell structures. An exemplary interconnect structure comprises a substrate and a first dielectric layer, overlying the substrate and exposing a conductive feature formed therethrough and connected with the substrate, wherein the first dielectric layer includes a plurality of polygon cell structures with hollow interior.
公开/授权文献
- US07312512B2 Interconnect structure with polygon cell structures 公开/授权日：2007-12-25
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