Invention Application
- Patent Title: Ferroelectric film with ferroelectric domain array and method for forming same
- Patent Title (中): 具有铁电畴阵列的铁电薄膜及其形成方法
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Application No.: US11432240Application Date: 2006-05-10
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Publication No.: US20070072010A1Publication Date: 2007-03-29
- Inventor: Wen-Hui Duan , Zhong-Qing Wu , Jian Wu , Bing-Lin Gu
- Applicant: Wen-Hui Duan , Zhong-Qing Wu , Jian Wu , Bing-Lin Gu
- Applicant Address: CN Beijing City TW Tu-Cheng City
- Assignee: Tsinghua University,HON HAI Precision Industry CO., LTD.
- Current Assignee: Tsinghua University,HON HAI Precision Industry CO., LTD.
- Current Assignee Address: CN Beijing City TW Tu-Cheng City
- Priority: CN200510037511.1 20050923
- Main IPC: B32B9/00
- IPC: B32B9/00 ; B32B19/00 ; B05D5/12 ; B29C71/04
Abstract:
A ferroelectric film includes a plurality of ferroelectric nanodomains configured in a regularly staggered fashion. The ferroelectric film has a quasi 2-dimensional configuration and is comprised of a ferroelectric material. A method for forming a ferroelectric film is also provided. A ferroelectric film comprised of a ferroelectric material is prepared. The ferroelectric film has a quasi 2-dimensional configuration and defines a direction that is normal to the quasi 2-dimensional configuration. An electric field along the normal direction is applied to the ferroelectric film, thereby the ferroelectric film having an array of ferroelectric nanodomains configured in a regularly staggered fashion is obtained.
Public/Granted literature
- US07604877B2 Ferroelectric film with ferroelectric domain array Public/Granted day:2009-10-20
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