发明申请
US20070072325A1 Self-aligned photodiode for CMOS image sensor and method of making
有权
CMOS图像传感器的自对准光电二极管及其制作方法
- 专利标题： Self-aligned photodiode for CMOS image sensor and method of making
- 专利标题（中）： CMOS图像传感器的自对准光电二极管及其制作方法
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申请号： US11235823申请日： 2005-09-27
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公开(公告)号： US20070072325A1公开(公告)日： 2007-03-29
- 发明人: Howard Rhodes
- 申请人： Howard Rhodes
- 申请人地址： US CA Sunnyvale
- 专利权人： OmniVision Technologies, Inc.
- 当前专利权人： OmniVision Technologies, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for forming a photodiode that is self-aligned to a transfer gate while being compatible with a metal silicide process is disclosed. The method comprises forming a gate stack of gate oxide, polysilicon, and a sacrificial/disposable cap insulator over the polysilicon. The insulator may be a combination of silicon oxynitride and silicon dioxide. After formation of the photodiode, the cap insulator layer is removed.
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