发明申请
- 专利标题: Method of forming an oxide layer
- 专利标题(中): 形成氧化物层的方法
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申请号: US11237866申请日: 2005-09-29
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公开(公告)号: US20070072438A1公开(公告)日: 2007-03-29
- 发明人: Raymond Joe
- 申请人: Raymond Joe
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/473
摘要:
A method for forming an oxide layer on a substrate. The method includes exposing a process gas containing H2, an oxygen-containing gas, and a halogen-containing oxidation accelerant gas to the substrate, where the process chamber is maintained at a subatmospheric pressure, and forming an oxide layer through thermal oxidization of the substrate by the process gas. According to one embodiment of the invention, the substrate can be maintained at a temperature between about 150° C. and about 900° C. A microstructure containing an oxide layer is described, where the oxide layer can be a gate dielectric oxide layer or an interface oxide layer integrated with a high-k layer.
公开/授权文献
- US07326655B2 Method of forming an oxide layer 公开/授权日:2008-02-05