发明申请
US20070075317A1 Semiconductor device and semiconductor device manufacturing method
审中-公开
半导体器件和半导体器件制造方法
- 专利标题： Semiconductor device and semiconductor device manufacturing method
- 专利标题（中）： 半导体器件和半导体器件制造方法
-
申请号： US11489572申请日： 2006-07-20
-
公开(公告)号： US20070075317A1公开(公告)日： 2007-04-05
- 发明人: Juri Kato , Hideaki Oka , Kei Kanemoto , Toshiki Hara , Tetsushi Sakai
- 申请人： Juri Kato , Hideaki Oka , Kei Kanemoto , Toshiki Hara , Tetsushi Sakai
- 申请人地址： JP TOKYO JP TOKYO
- 专利权人： SEIKO EPSON CORPORATION,TOKYO INSTITUTE OF TECHNOLOGY
- 当前专利权人： SEIKO EPSON CORPORATION,TOKYO INSTITUTE OF TECHNOLOGY
- 当前专利权人地址： JP TOKYO JP TOKYO
- 优先权： JP2005-288877 20050930
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
A semiconductor device includes a back gate electrode composed of a first single-crystal semiconductor layer formed on a first insulating layer; a second insulating layer formed on the first single-crystal semiconductor layer and having a film thickness smaller than a film thickness of the first insulating layer; a second single-crystal semiconductor layer formed on the second insulating layer; a gate electrode formed on the second single-crystal semiconductor layer; and source and drain layers that are formed on the second single-crystal semiconductor layer and arranged on respective sides of the gate electrode.