Semiconductor memory device and method of production
摘要:
Final sections of the word lines are arranged in a staggered fashion to fan out and have larger lateral extensions than the word lines. Interspaces are filled with a dielectric material, and a mask is applied that partially covers the final sections and leaves contact areas in regions adjacent to the final sections and to the interspaces open. This mask is used to remove the dielectric material between the word line stacks. A second word line layer is applied and planarized to form second word lines between the first word lines, which have contact areas arranged in a staggered fashion to fan out like the final sections of the first word lines.
公开/授权文献
信息查询
0/0