发明申请
US20070075360A1 Cobalt silicon contact barrier metal process for high density semiconductor power devices
审中-公开
用于高密度半导体功率器件的钴硅接触屏障金属工艺
- 专利标题： Cobalt silicon contact barrier metal process for high density semiconductor power devices
- 专利标题（中）： 用于高密度半导体功率器件的钴硅接触屏障金属工艺
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申请号： US11240255申请日： 2005-09-30
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公开(公告)号： US20070075360A1公开(公告)日： 2007-04-05
- 发明人: Hong Chang , Tiesheng Li , Sung-Shan Tai , Daniel Ng , Anup Bhalla
- 申请人： Hong Chang , Tiesheng Li , Sung-Shan Tai , Daniel Ng , Anup Bhalla
- 专利权人： Alpha &Omega Semiconductor, LTD.
- 当前专利权人： Alpha &Omega Semiconductor, LTD.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source contact opening opened on top of an area extended over the body region and the source region through a protective insulation layer wherein the area further has a cobalt-silicide layer disposed near a top surface of the substrate. The MOSFET cell further includes a Ti/TiN conductive layer covering the area interfacing with the cobalt-silicide layer over the source contact opening. The MOSFET cell further includes a source contact metal layer formed on top of the Ti/TiN conductive layer ready to form source-bonding wires thereon.
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