Invention Application
- Patent Title: Semiconductor device and manufacturing process therefor
- Patent Title (中): 半导体器件及其制造工艺
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Application No.: US10576412Application Date: 2004-10-19
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Publication No.: US20070075372A1Publication Date: 2007-04-05
- Inventor: Koichi Terashima , Kiyoshi Takeuchi , shigeharu Yamagami , Hitoshi Wakabayashi , Atsushi Ogura , Koji Watanabe , Toru Tatsumi , Koichi Takeda , Masahiro Nomura , Masayasu Tanaka
- Applicant: Koichi Terashima , Kiyoshi Takeuchi , shigeharu Yamagami , Hitoshi Wakabayashi , Atsushi Ogura , Koji Watanabe , Toru Tatsumi , Koichi Takeda , Masahiro Nomura , Masayasu Tanaka
- Assignee: NEC CORPORATION
- Current Assignee: NEC CORPORATION
- Priority: JP2003-359262 20031020; JP2004-294133 20041006
- International Application: PCT/JP04/15405 WO 20041019
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
There is provided a semiconductor device wherein at least the largest width of a source/drain region is larger than the width of a semiconductor region and the source/drain region has a slope having a width continuously increasing from the uppermost side to the substrate side, and a silicide film is formed in the surface of the slope.
Information query
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