发明申请
- 专利标题： Lateral semiconductor device
- 专利标题（中）： 侧面半导体器件
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申请号： US11488154申请日： 2006-07-18
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公开(公告)号： US20070075393A1公开(公告)日： 2007-04-05
- 发明人: Teruhisa Ikuta , Hiroyoshi Ogura , Yoshinobu Sato , Toru Terashita
- 申请人： Teruhisa Ikuta , Hiroyoshi Ogura , Yoshinobu Sato , Toru Terashita
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 优先权： JP2005-285726 20050930
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
In a high voltage P-channel MOS transistor formed on a silicon-on-insulator (SOI) substrate, a P+-type source region (8), an N-type body region (4) and an N+-body contact diffusion region (10) are surrounded by a P+-type drain region (9) and a P-type drift region (5). A gate electrode (7) is formed to overlap the end portion of the N-type body region (4). The end portion of the N-type body region (4) has a portion in which the gate electrode (7) and the P+-type source region (8) are not adjacent to each other.
公开/授权文献
- US07323747B2 Lateral semiconductor device 公开/授权日：2008-01-29
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