Invention Application
- Patent Title: Test pattern of semiconductor device and test method using the same
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Application No.: US11542589Application Date: 2006-10-03
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Publication No.: US20070075720A1Publication Date: 2007-04-05
- Inventor: Jong-Hyun Lee
- Applicant: Jong-Hyun Lee
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Priority: KR04-4378 20040120
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
There are provided a test pattern of a semiconductor device and a test method using the same. The test pattern of the semiconductor device includes a conductive pattern disposed on a semiconductor substrate, and the conductive pattern includes a plurality of line regions, which are aligned in parallel, and spaced at a uniform interval, and a plurality of connecting regions for connecting the plurality of line regions in a zigzag shape. The test pattern includes a plurality of transistors electrically switching first ends of the adjacent line regions corresponding to the connecting region, and each transistor includes a source region, which is electrically connected to one end of one of the adjacent line regions, and a drain region, which is electrically connected to one end of the other one of the adjacent line regions. Further, a transistor selecting part is electrically connected to gates of the plurality of transistors, for selecting one of the plurality of transistors or a combination thereof.
Public/Granted literature
- US07436198B2 Test pattern of semiconductor device and test method using the same Public/Granted day:2008-10-14
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