发明申请
- 专利标题: FABRICATING METHOD OF A PIXEL STRUCTURE
- 专利标题(中): 像素结构的制作方法
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申请号: US11309825申请日: 2006-10-04
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公开(公告)号: US20070076156A1公开(公告)日: 2007-04-05
- 发明人: Chien-Sheng Yang
- 申请人: Chien-Sheng Yang
- 优先权: TW92134284 20031205
- 主分类号: G02F1/1343
- IPC分类号: G02F1/1343
摘要:
A fabricating method of a pixel structure is disclosed. The pixel structure is disposed on a substrate. The pixel structure comprises a scan line, a data line, an active element, a capacitor electrode, a pixel electrode and an electric field shielding layer. The fabricating method of the pixel structure comprises forming the scan line, the data line and the active element on the substrate first. The scan line and the data line are electrically coupled to the active element. Then, the capacitor electrode and the electric field shielding layer are formed on the substrate. Finally, the pixel electrode is formed on the substrate, covering the capacitor electrode and electrically coupled to the active element. The pixel electrode and the capacitor electrode form a pixel storage capacitor. The electric field shielding layer can avoid the interference between the data line and the pixel electrode.
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