公开(公告)号：US07298354B2

公开(公告)日：2007-11-20

申请号：US11005006

申请日：2004-12-07

申请人： Chien-Sheng Yang

发明人： Chien-Sheng Yang

IPC分类号： G09G3/36

CPC分类号： G09G3/3659 ,  G09G2300/0809 ,  G09G2310/0205 ,  G09G2320/0257 ,  G09G2320/0261

摘要： A liquid crystal display (LCD) with improved motion image quality. The LCD displays a frame during a frame time. A pixel of the LCD has a first switch and a second switch. At a first time point, the first switch is turned on by a video scan line, and a video data signal is transmitted to the pixel through a video data line, which make the pixel have first luminance intensity. At a second time point, the second switch is turned on by a particular color signal scan line, and a particular color data signal is transmitted to the pixel through a particular color signal data line, which make the pixel have second luminance intensity smaller than the first luminance intensity. A time interval between the second time point and the first time point is smaller than the frame time and the image dragging phenomenon is avoided.

摘要翻译： 具有改善的运动图像质量的液晶显示器（LCD）。 LCD在帧时间内显示一帧。 LCD的像素具有第一开关和第二开关。 在第一时间点，第一开关由视频扫描线导通，并且视频数据信号通过使像素具有第一亮度强度的视频数据线发送到像素。 在第二时间点，第二开关被特定的彩色信号扫描线导通，特定的彩色数据信号通过特定的彩色信号数据线传输到像素，这使得像素的第二亮度强度小于 第一亮度强度。 第二时间点和第一时间点之间的时间间隔小于帧时间，避免了图像拖动现象。

公开(公告)号：US06886405B2

公开(公告)日：2005-05-03

申请号：US10604855

申请日：2003-08-21

申请人： Chien-Sheng Yang

发明人： Chien-Sheng Yang

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P2015/0828

摘要： A capacitive acceleration sensor includes a non-single-crystal-silicon-based substrate, a polysilicon beam structure having a movable section that includes a movable electrode, a polysilicon supporter positioned on the non-single-crystal-silicon-based substrate for fixing the beam structure and forming a distance between the beam structure and the non-single-crystal-silicon-based substrate, a stationary electrode positioned on the non-single-crystal-silicon-based substrate and opposite to the movable section of the beam structure, and a thin film transistor (TFT) control circuit positioned on the non-single-crystal-silicon-based substrate. The stationary electrode and the movable electrode constitute a plate capacitor, and the TFT control circuit is electrically connected to the plate capacitor.

摘要翻译： 电容加速度传感器包括非单晶硅基底板，具有可移动部分的多晶硅束结构，该可移动部分包括可动电极，位于非单晶硅基底板上的多晶硅支撑体，用于固定 并且在所述光束结构和所述非单晶硅基基板之间形成距离，所述固定电极位于所述非单晶硅基基板上并且与所述光束结构的可动部分相对， 以及位于非单晶硅基底板上的薄膜晶体管（TFT）控制电路。 固定电极和可动电极构成板状电容器，TFT控制电路与板状电容器电连接。

公开(公告)号：US06597015B2

公开(公告)日：2003-07-22

申请号：US10154603

申请日：2002-05-22

申请人： Chien-Sheng Yang ,  Fang-Chen Luo

发明人： Chien-Sheng Yang ,  Fang-Chen Luo

IPC分类号： H01L2100

CPC分类号： H01L27/1288 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/3244 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of fabricating a thin-film transistor on an insulation substrate. A first conductive layer, a gate dielectric layer, a silicon layer and a doped silicon layer are formed on the insulation substrate. These four layers are patterned to form a gate and a gate line. A second conductive layer is formed over the insulation substrate. The second conductive layer and the doped silicon layer are patterned to form a source/drain region, a source/drain conductive layer and a source/drain line on both sides of the gate line. A protection layer is formed over the insulation layer, followed by a patterning step to form openings on the source/drain conductive layer and the source/drain line. A transparent conductive layer is formed on the protection layer and in the openings. After being patterned, a pixel electrode is formed, and a portion of the transparent conductive layer remains to electrically connect the source/drain line and the source/drain conductive layer. The method of fabricating the thin-film transistor can be applied to fabrication of fax machine, CIS such as scanner and various electronic devices. It can also be applied to fabrication of normal thin-film transistor flat panel display such as liquid crystal display (LCD) and organic light emitting diode (OLED).

公开(公告)号：US08212143B2

公开(公告)日：2012-07-03

申请号：US12842048

申请日：2010-07-23

申请人： Chin-Yao Tsai ,  Chien-Sheng Yang

发明人： Chin-Yao Tsai ,  Chien-Sheng Yang

IPC分类号： H01L31/042 ,  H01L31/00

CPC分类号： H01L31/03921 ,  H01L31/022425 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/0735 ,  H01L31/076 ,  H01L31/077 ,  Y02E10/543 ,  Y02E10/544 ,  Y02E10/548 ,  Y02P70/521

摘要： A thin film solar cell including a substrate, a first conductive layer, a photoelectric conversion layer, a second conductive layer and a passivation layer is provided. The first conductive layer disposed on the substrate has a plurality of first openings, so as to divide the first conductive layer into bottom electrodes of a plurality of photovoltaic elements. The photoelectric conversion layer disposed on the first conductive layer has a plurality of second openings. The second conductive layer is disposed on the photoelectric conversion layer and electrically connected to the first conductive layer through the second openings. The passivation layer is disposed on the sidewall of the photoelectric conversion layer, so that the second conductive layer in the second openings is electrically isolated from the photoelectric conversion layer. A manufacturing method of the thin film solar cell is also provided.

摘要翻译： 提供了包括基板，第一导电层，光电转换层，第二导电层和钝化层的薄膜太阳能电池。 设置在基板上的第一导电层具有多个第一开口，以便将第一导电层分成多个光电元件的底部电极。 设置在第一导电层上的光电转换层具有多个第二开口。 第二导电层设置在光电转换层上，并通过第二开口与第一导电层电连接。 钝化层设置在光电转换层的侧壁上，使得第二开口中的第二导电层与光电转换层电隔离。 还提供了薄膜太阳能电池的制造方法。

公开(公告)号：US20120042923A1

公开(公告)日：2012-02-23

申请号：US12967506

申请日：2010-12-14

申请人： Chin-Yao Tsai ,  Chien-Sheng Yang

发明人： Chin-Yao Tsai ,  Chien-Sheng Yang

IPC分类号： H01L31/042

CPC分类号： H01L31/02021 ,  H01L31/046 ,  H01L31/0504 ,  H02S40/30 ,  H02S50/00 ,  Y02E10/50

摘要： A thin film solar cell includes a substrate, a plurality of photovoltaic cells and at least one control unit. The photovoltaic cells generate a photocurrent respectively. Each photovoltaic cell includes a first conductive layer disposed on the substrate, a photovoltaic layer and a second conductive layer. The photovoltaic layer disposed on the first conductive layer has an opening exposing the first conductive layer. The second conductive layer disposed on the photovoltaic layer is connected electrically to the first conductive layer of the adjacent photovoltaic cell through the opening. The control unit is connected to at least one of the photovoltaic cell electrically. When the photocurrent generated by at least one of the photovoltaic cells is different from the photocurrent generated by other photovoltaic cells, the control unit provided a compensable current to the first photovoltaic cell to make the photocurrents provided by the overall photovoltaic cells being matched.

摘要翻译： 薄膜太阳能电池包括基板，多个光伏电池和至少一个控制单元。 光伏电池分别产生光电流。 每个光伏电池包括设置在基板上的第一导电层，光电转换层和第二导电层。 设置在第一导电层上的光伏层具有暴露第一导电层的开口。 布置在光伏层上的第二导电层通过开口与相邻的光伏电池的第一导电层电连接。 控制单元电连接到至少一个光伏电池。 当由至少一个光伏电池产生的光电流与由其他光伏电池产生的光电流不同时，控制单元向第一光伏电池提供可补偿的电流，使整个光伏电池提供的光电流匹配。

公开(公告)号：US20070076156A1

公开(公告)日：2007-04-05

申请号：US11309825

申请日：2006-10-04

申请人： Chien-Sheng Yang

发明人： Chien-Sheng Yang

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  G02F2001/136218

摘要： A fabricating method of a pixel structure is disclosed. The pixel structure is disposed on a substrate. The pixel structure comprises a scan line, a data line, an active element, a capacitor electrode, a pixel electrode and an electric field shielding layer. The fabricating method of the pixel structure comprises forming the scan line, the data line and the active element on the substrate first. The scan line and the data line are electrically coupled to the active element. Then, the capacitor electrode and the electric field shielding layer are formed on the substrate. Finally, the pixel electrode is formed on the substrate, covering the capacitor electrode and electrically coupled to the active element. The pixel electrode and the capacitor electrode form a pixel storage capacitor. The electric field shielding layer can avoid the interference between the data line and the pixel electrode.

摘要翻译： 公开了一种像素结构的制造方法。 像素结构设置在基板上。 像素结构包括扫描线，数据线，有源元件，电容器电极，像素电极和电场屏蔽层。 像素结构的制造方法包括首先在衬底上形成扫描线，数据线和有源元件。 扫描线和数据线电耦合到有源元件。 然后，在基板上形成电容电极和电场屏蔽层。 最后，像素电极形成在衬底上，覆盖电容器电极并电耦合到有源元件。 像素电极和电容器电极形成像素存储电容器。 电场屏蔽层可以避免数据线和像素电极之间的干扰。

公开(公告)号：US07187812B2

公开(公告)日：2007-03-06

申请号：US10605005

申请日：2003-08-31

申请人： Chien-Sheng Yang

发明人： Chien-Sheng Yang

IPC分类号： G06K7/00 ,  G06K9/00

CPC分类号： G06K9/0004

摘要： A fingerprint sensor for sensing a fingerprint has a detecting and processing circuit and a plurality of sensing units. Each of the sensing units has a switch element, a first resistor, and a second resistor. The switch element has a first terminal, a second terminal, and a third terminal. Resistance of the second resistor is fixed. The fingerprint influences an intensity of light illuminating the first resistor so that resistance of the first resistor and a voltage level of the second terminal change. When the switch elements are turned on, the detecting and processing circuit analyzes the fingerprint according to the voltage levels of the second terminals of the plurality switch elements.

摘要翻译： 用于感测指纹的指纹传感器具有检测和处理电路以及多个感测单元。 每个感测单元具有开关元件，第一电阻器和第二电阻器。 开关元件具有第一端子，第二端子和第三端子。 第二电阻器的电阻是固定的。 指纹影响照射第一电阻器的光的强度，使得第一电阻器的电阻和第二端子的电压电平改变。 当开关元件接通时，检测和处理电路根据多个开关元件的第二端子的电压电平分析指纹。

公开(公告)号：US06943070B2

公开(公告)日：2005-09-13

申请号：US10679333

申请日：2003-10-07

申请人： Chien-Sheng Yang

发明人： Chien-Sheng Yang

IPC分类号： H01L21/8238 ,  H01L27/146 ,  H01L29/04 ,  H01L31/00 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/14601 ,  H01L27/14643 ,  H01L27/14689

摘要： A complementary metal oxide semiconductor (CMOS) image sensor includes at least a non-single-crystal-silicone-base substrate, an opaque layer, a polysilicon layer, a source, a drain, a gate dielectric layer, a first transparent gate electrode, and a second gate transparent gate electrode. The opaque layer is formed on the non-single-crystal-silicone-base substrate, and the polysilicon layer, formed on the opaque layer, has a charge-generating region. The source and the drain are formed in the polysilicon layer, and a pre-channel region is formed between the source and the drain. The source is located between the pre-channel region and the charge-generating region. The gate dielectric layer is formed on the polysilicon layer, and the first and the second transparent gate electrodes, formed on the gate dielectric layer, are respectively located above the charge-generating region and the pre-channel region.

摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器至少包括非单晶硅基底座，不透明层，多晶硅层，源极，漏极，栅极介电层，第一透明栅电极， 和第二栅极透明栅电极。 在非单晶硅基基板上形成不透明层，形成在不透明层上的多晶硅层具有电荷产生区域。 源极和漏极形成在多晶硅层中，并且在源极和漏极之间形成预通道区域。 源位于预通道区域和电荷产生区域之间。 栅电介质层形成在多晶硅层上，形成在栅介质层上的第一和第二透明栅电极分别位于电荷产生区和预通道区之上。

公开(公告)号：US20050013469A1

公开(公告)日：2005-01-20

申请号：US10605005

申请日：2003-08-31

申请人： Chien-Sheng Yang

发明人： Chien-Sheng Yang

IPC分类号： G06K9/00

CPC分类号： G06K9/0004

摘要： A fingerprint sensor for sensing a fingerprint has a detecting and processing circuit and a plurality of sensing units. Each of the sensing units has a switch element, a first resistor, and a second resistor. The switch element has a first terminal, a second terminal, and a third terminal. Resistance of the second resistor is fixed. The fingerprint influences an intensity of light illuminating the first resistor so that resistance of the first resistor and a voltage level of the second terminal change. When the switch elements are turned on, the detecting and processing circuit analyzes the fingerprint according to the voltage levels of the second terminals of the plurality switch elements.

摘要翻译： 用于感测指纹的指纹传感器具有检测和处理电路以及多个感测单元。 每个感测单元具有开关元件，第一电阻器和第二电阻器。 开关元件具有第一端子，第二端子和第三端子。 第二电阻器的电阻是固定的。 指纹影响照射第一电阻器的光的强度，使得第一电阻器的电阻和第二端子的电压电平改变。 当开关元件接通时，检测和处理电路根据多个开关元件的第二端子的电压电平分析指纹。

公开(公告)号：US06486009B2

公开(公告)日：2002-11-26

申请号：US09843994

申请日：2001-04-27

申请人： Chien-Sheng Yang ,  Fang-Chen Luo

发明人： Chien-Sheng Yang ,  Fang-Chen Luo

IPC分类号： H01L2100

CPC分类号： H01L27/1288 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/3244 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765

摘要： A method of fabricating a thin-film transistor on an insulation substrate. A first conductive layer, a gate dielectric layer, a silicon layer and a doped silicon layer are formed on the insulation substrate. These four layers are patterned to form a gate and a gate line. A second conductive layer is formed over the insulation substrate. The second conductive layer and the doped silicon layer are patterned to form a source/drain region, a source/drain conductive layer and a source/drain line on both sides of the gate line. A protection layer is formed over the insulation layer, followed by a patterning step to form openings on the source/drain conductive layer and the source/drain line. A transparent conductive layer is formed on the protection layer and in the openings. After being patterned, a pixel electrode is formed, and a portion of the transparent conductive layer remains to electrically connect the source/drain line and the source/drain conductive layer. The method of fabricating the thin-film transistor can be applied to fabrication of fax machine, CIS such as scanner and various electronic devices. It can also be applied to fabrication of normal thin-film transistor flat panel display such as liquid crystal display (LCD) and organic light emitting diode (OLED).

摘要翻译： 一种在绝缘基板上制造薄膜晶体管的方法。 在绝缘基板上形成第一导电层，栅介质层，硅层和掺杂硅层。 将这四层图案化以形成栅极和栅极线。 第二导电层形成在绝缘基板上。 将第二导电层和掺杂硅层图案化以在栅极线的两侧上形成源极/漏极区域，源极/漏极导电层和源极/漏极线。 在绝缘层上形成保护层，接着形成图案化步骤，以在源极/漏极导电层和源极/漏极线上形成开口。 在保护层和开口中形成透明导电层。在图案化之后，形成像素电极，并且透明导电层的一部分保持电源连接源极/漏极线和源极/漏极导电层。 制造薄膜晶体管的方法可以应用于传真机，诸如扫描器和各种电子设备的CIS的制造。 也可以应用于液晶显示器（LCD）和有机发光二极管（OLED）等普通薄膜晶体管平板显示器的制造。